Temperature-dependent thermal capacitance characterization for SOI-MOSFETs

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URI: http://hdl.handle.net/10902/17441
ISSN: 0018-9383
ISSN: 1557-9646
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Autoría
González Pérez, Benito; Aja Abelán, BeatrizAutoridad Unican; Artal Latorre, EduardoAutoridad Unican; Lázaro Guillén, Antonio; Núnez Ordónez, Antonio
Fecha
2019-10
Derechos
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publicado en
IEEE Transactions on Electron Devices, 2019, 66(10), 4120-4125
Editorial
Institute of Electrical and Electronics Engineers Inc.
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Palabras clave
Electrothermal characterization
Model
SOI-MOSFET
Substrate temperature
Thermal capacitance
Resumen/Abstract
Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on-insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi-fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 °C.
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