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Accurately modeling of Zero Biased Schottky-Diodes at millimeter-wave frequencies

dc.contributor.authorGutiérrez Asueta, Jéssica 
dc.contributor.authorZeljami, Kaoutar
dc.contributor.authorFernández Ibáñez, Tomás 
dc.contributor.authorPascual Gutiérrez, Juan Pablo 
dc.contributor.authorTazón Puente, Antonio 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2019-07-24T14:12:19Z
dc.date.available2019-07-24T14:12:19Z
dc.date.issued2019-06-20
dc.identifier.issn2079-9292
dc.identifier.otherCSD2008-00068es_ES
dc.identifier.otherTEC2014-58341-C4-1-Res_ES
dc.identifier.otherTEC2017-83343-C4-1-Res_ES
dc.identifier.urihttp://hdl.handle.net/10902/16590
dc.description.abstractThis paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.es_ES
dc.description.sponsorshipThis research was funded by the Spanish Ministry of Economy, Science and Innovation for the financial support provided through projects CONSOLIDER-INGENIO CSD2008-00068 (TERASENSE), the continuing excellence network SPATEK and the projects TEC2014-58341-C4-1-R and TEC2017-83343-C4-1-R.es_ES
dc.format.extent13 p.es_ES
dc.language.isoenges_ES
dc.publisherMDPIes_ES
dc.rights© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.es_ES
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.sourceElectronics, 2019, 8(6), 696es_ES
dc.subject.otherW bandes_ES
dc.subject.otherSchottky Diode Detectorses_ES
dc.subject.otherZBD modelinges_ES
dc.subject.otherWire bondinges_ES
dc.subject.otherFlip-chipes_ES
dc.titleAccurately modeling of Zero Biased Schottky-Diodes at millimeter-wave frequencieses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsopenAccesses_ES
dc.identifier.DOI10.3390/electronics8060696
dc.type.versionpublishedVersiones_ES


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© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.Excepto si se señala otra cosa, la licencia del ítem se describe como © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.