Accurately modeling of Zero Biased Schottky-Diodes at millimeter-wave frequencies

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URI: http://hdl.handle.net/10902/16590
ISSN: 2079-9292
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Autoría
Gutiérrez Asueta, JéssicaAutoridad Unican; Zeljami, Kaoutar; Fernández Ibáñez, TomásAutoridad Unican; Pascual Gutiérrez, Juan PabloAutoridad Unican; Tazón Puente, AntonioAutoridad Unican
Fecha
2019-06-20
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© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.
Publicado en
Electronics, 2019, 8(6), 696
Editorial
MDPI
Palabras clave
W band
Schottky Diode Detectors
ZBD modeling
Wire bonding
Flip-chip
Resumen/Abstract
This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.
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© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.Excepto si se señala otra cosa, la licencia del ítem se describe como © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.