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    New methodologies for the analysis and synthesis of oscillator circuits

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    Identificadores
    URI: http://hdl.handle.net/10902/16381
    DOI: 10.1109/LAMC.2018.8699036
    ISBN: 978-1-5386-7333-1
    ISBN: 978-1-5386-7334-8
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    Autoría
    Suárez Rodríguez, AlmudenaAutoridad Unican; Pontón Lobete, María IsabelAutoridad Unican; Sancho Lucio, Sergio MiguelAutoridad Unican; Ramírez Terán, Franco ArielAutoridad Unican
    Fecha
    2018
    Derechos
    © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
    Publicado en
    IEEE MTT-S Latin America Microwave Conference (LAMC), Arequipa, Perú, 2018, 200-203
    Editorial
    IEEE
    Enlace a la publicación
    https://doi.org/10.1109/LAMC.2018.8699036
    Palabras clave
    Oscillator
    Two-tier methodology
    Transient
    Resumen/Abstract
    Advances in the analysis and synthesis of oscillator circuits, using harmonic balance (HB), are presented. They rely on the use of auxiliary generators, which can be introduced into the HB software to impose mathematical conditions or to extract a realistic oscillator model. In particular, a bifurcation-detection technique, for the accurate design of dual-frequency oscillators, and a semi-analytical function, for the prediction of oscillation transients, are described. In dual-frequency oscillators, each oscillation must be the only stable solution in a certain parameter interval. This is ensured through the calculation of two distinct primary-Hopf bifurcation loci, which should give rise to disjoint parameter regions. Conditions for the physical observability of concurrent oscillations are also given. With respect to the transient prediction, both the linear and nonlinear stages are considered. The analysis is based on the derivation of outer-tier semi analytical equation, from which a growth rate function is identified, which, unlike ordinary simulations, is not constrained to particular initial values. The methods have been applied to two FET-based oscillator circuits that have been manufactured and measured, obtaining good agreement with the simulation results.
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    UNIVERSIDAD DE CANTABRIA

    Repositorio realizado por la Biblioteca Universitaria utilizando DSpace software
    Contacto | Sugerencias
    Metadatos sujetos a:licencia de Creative Commons Reconocimiento 4.0 España