UHF power conversion with GaN HEMT class-E2 topologies

García García, José Ángel; Ruiz Lavín, María de las Nieves; Vegas Bayer, David; Pampín González, María; Mediavilla Sánchez, Ángel

doi:10.1109/CSICS.2017.8240439

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UHFPowerConversion.pdf (829.2Kb)

Identificadores

URI: http://hdl.handle.net/10902/13421

DOI: 10.1109/CSICS.2017.8240439

ISBN: 978-1-5090-6071-9

ISBN: 978-1-5090-6069-6

ISBN: 978-1-5090-6070-2

Fecha

2017

Derechos

© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Publicado en

IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Miami, Florida, 2017, 80-83

Editorial

IEEE

Enlace a la publicación

https://doi.org/10.1109/CSICS.2017.8240439

Palabras clave

Class-E

Dc/dc conversion

GaN HEMTs

Microwave

Resonant Converters

Soft switching

UHF

Resumen/Abstract

This paper reviews the use of UHF double class-E (class-E2) topologies for dc/dc power conversion. After introducing this attractive resonant converter in the context of the time-reversal duality principle, two different lumped-element networks are described for appropriately terminating the drain of the switching devices. Recent implementation examples, taking advantage of GaN HEMT processes, are then presented. The potential for a fast dynamic response is validated (with a slew rate over 2 V/nS), while also the feasibility for an appropriate operation without requiring external RF gate driving signals. A solution for approximating a load-insensitive operation is finally exposed.

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