Efficient class-E power amplifier for variable load operation

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URI: http://hdl.handle.net/10902/11467
ISBN: 978-1-5090-5862-4
ISBN: 978-1-5090-5863-1
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Autoría
Vegas Bayer, DavidAutoridad Unican; Moreno Díaz, Felipe; Ruiz Lavín, María de las NievesAutoridad Unican; García García, José ÁngelAutoridad Unican
Fecha
2017
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© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publicado en
International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Graz, Austria, 2017, 91-93
Editorial
IEEE
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Palabras clave
Class-E
Efficiency
GaN HEMT
Load modulation
Power amplifier
UHF
Resumen/Abstract
In this paper, a GaN HEMT class-E power amplifier (PA) has been designed for efficiently operating under variable load resistance at the 750 MHz frequency band. The desired zero voltage switching (ZVS) of the device can be approximated for a wide range of resistive loads, by means of a simple inductive impedance inverter, derived from [1]. The loadpull contours, obtained from simulations, allowed the drain terminating network to be properly adjusted in order to maximize the output power control while at the same time minimizing losses. Once the amplifier was implemented, an efficiency over 76% has been measured at 9.6 dB power back-off, with a peak of 85% at 50 Ω. In addition, the efficiency stays as high as 75% for a 150 MHz frequency range.
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