dc.contributor.author | Pérez Cisneros, José Ramón | |
dc.contributor.author | Ruiz Lavín, María de las Nieves | |
dc.contributor.author | Lobeira Rubio, Manuel | |
dc.contributor.author | Brañas Reyes, Christian | |
dc.contributor.author | Mingo Sanz, Jesús de | |
dc.contributor.author | García García, José Ángel | |
dc.contributor.other | Universidad de Cantabria | es_ES |
dc.date.accessioned | 2017-07-26T12:41:52Z | |
dc.date.available | 2017-07-26T12:41:52Z | |
dc.date.issued | 2016 | |
dc.identifier.isbn | 978-1-5090-0699-1 | |
dc.identifier.isbn | 978-1-5090-0698-4 | |
dc.identifier.other | TEC2014-58341-C4-1-R | es_ES |
dc.identifier.other | TEC2014-58341-C4-2-R | es_ES |
dc.identifier.uri | http://hdl.handle.net/10902/11466 | |
dc.description.abstract | In this paper, class-E power amplifiers (PAs) and rectifiers, operating at UHF band, are properly integrated in efficient AC-to-RF and RF-to-AC converters for their use in 50/60 Hz wireless power transmission (WPT). Slightly modifying a center-tap full-wave rectifier, it is proved that a 915 MHz frequency carrier may be high-level amplitude modulated by each of the semi-cycles of the utility waveform. Assuming those components are transmitted by means of orthogonal antenna polarizations, the high-fidelity recovery of both semi-sinusoids in the remote position is also demonstrated, to be stepped-up and combined at the ∆ port of an additional center-tap transformer. GaN HEMT packaged devices were selected for the designed PAs, while Schottky diodes for the rectifiers, resulting in average efficiency figures of 83.3% and 75.4%, respectively. | es_ES |
dc.description.sponsorship | The authors would like to thank the Ministry of Economy and Competitiveness by the financial support provided through projects TEC2014-58341-C4-1-R and TEC2014- 58341-C4-2-R, co-funded with FEDER. José R. PérezCisneros also thanks the support to his stay at the Univ. of Cantabria provided by the pre-doctoral mobility grant EEBBI-15-10447. | es_ES |
dc.format.extent | 4 p. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | IEEE | es_ES |
dc.rights | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | es_ES |
dc.source | IEEE MTT-S International Microwave Symposium (IMS), San Francisco, 2016, 515-518 | es_ES |
dc.subject.other | AC | es_ES |
dc.subject.other | Class-E | es_ES |
dc.subject.other | DC | es_ES |
dc.subject.other | GaN HEMT | es_ES |
dc.subject.other | Inverter | es_ES |
dc.subject.other | Power amplifier | es_ES |
dc.subject.other | Rectenna | es_ES |
dc.subject.other | Rectifier | es_ES |
dc.subject.other | Schottky diode | es_ES |
dc.subject.other | Wireless power transmission | es_ES |
dc.title | Class-E power converters for AC (50/60 Hz) wireless transmission | es_ES |
dc.type | info:eu-repo/semantics/conferenceObject | es_ES |
dc.relation.publisherVersion | https://doi.org/10.1109/MWSYM.2016.7540077 | es_ES |
dc.rights.accessRights | openAccess | es_ES |
dc.identifier.DOI | 10.1109/MWSYM.2016.7540077 | |
dc.type.version | acceptedVersion | es_ES |