Diseño de un amplificador de alta eficiencia a GaN HEMT en 2.6 GHz

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URI: http://hdl.handle.net/10902/11134
ISBN: 978-84-608-9674-6
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Autoría
Mendiguchia Gutiérrez, Hugo; Vegas Bayer, DavidAutoridad Unican; Ruiz Lavín, María de las NievesAutoridad Unican; Pampín González, MaríaAutoridad Unican; García García, José ÁngelAutoridad Unican
Fecha
2016
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Atribución-NoComercial-SinDerivadas 3.0 España
Publicado en
URSI 2016, XXXI Simposium Nacional de la Unión Científica Internacional de Radio, Madrid
Resumen/Abstract
In this paper, a highly efficient GaN HEMT power amplifier (PA) for 2.6 GHz LTE band is presented. Using the nonlinear model of the selected device, the drain terminating and biasing networks are designed to provide near optima impedance values at the fundamental and higher order harmonics. The second and third harmonics terminations have been specially taken into account in order to obtain the best performance by means of a series of load-pull simulations. Good efficiency and PAE profiles have been obtained at the selected frequency band with the implemented amplifier. A peak of efficiency close to 80% has been measured at 2.6 GHz.
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