Amplificador de potencia doble-banda (1.8 GHz y 2.6 GHz) con alta eficiencia

Abstract

This work presents a methodology to design highefficient dual-band RF power amplifiers. Using the non-linear model of the selected GaN HEMT device, an analysis of the performance of the transistor to changes in the phases of both the second and the third harmonic has been carried out for both frequencies. Based on this analysis, drain terminating and biasing networks are designed to provide near optima impedance values at the fundamental and higher order harmonics to the selected frequency bands. The experimental characterization of the implemented prototype, which operates at 1.8 GHz and 2.6 GHz, can achieve drain efficiencies around 70 % with output power levels greater than 42 dBm in both frequency bands. Furthermore, PAEs obtained are very close to drain efficiencies after dual-band input matching.