Low noise amplifiers for MetOp-SG

Rösch, Markus; Tessmann, Axel; Leuther, Arnulf; Weber, Rainer; Moschetti, Giuseppe; Aja Abelán, Beatriz; Kotiranta, Mikko; Massler, Hermann; Kangas, Ville; Perichaud, Marie-Genevieve; Schlechtweg, Michael; Ambacher, Oliver

doi:10.1109/GSMM.2016.7500336

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LowNoiseAmplifiersfor.pdf (672.6Kb)

Identificadores

URI: http://hdl.handle.net/10902/11126

DOI: 10.1109/GSMM.2016.7500336

ISBN: 978-1-5090-1349-4

ISBN: 978-1-5090-1348-7

Fecha

2016

Derechos

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Publicado en

Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, Finland, 2016, 190-193

Editorial

IEEE

Enlace a la publicación

https://doi.org/10.1109/GSMM.2016.7500336

Palabras clave

Low noise amplifier (LNA)

Metamorphic high electron mobility transistor (mHEMT)

Monolithic microwave integrated circuit (MMIC)

Resumen/Abstract

We present low-noise amplifiers (LNA) that have been developed in the framework of two pre-qualification ESA projects for frequencies between 54 and 229 GHz for the METOP-SG satellite program. The main goal of these satellites is water vapor detection in atmospheric science and weather forecasting which advances the current state of the art for the metamorphic high electron mobility transistor (mHEMT) technology. The MMIC amplifiers are based on the In0.52Al0.48As/In0.8Ga0.2As/In0.53Ga0.47As heterostructure and utilize transistors with a gate length of 50 nm. On-wafer measurements will be presented for all frequency bands as well as results of packaged LNAs.

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