Device characterization and modeling for the design of UHF Class-E inverters and synchronous rectifiers

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URI: http://hdl.handle.net/10902/10207
ISBN: 978-1-4799-2147-8
ISBN: 978-1-4799-2148-5
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Autoría
Rizo Salas, Leysi; Ruiz Lavín, María de las NievesAutoridad Unican; García García, José ÁngelAutoridad Unican
Fecha
2014
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© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publicado en
IEEE 15th Workshop on Control and Modeling for Power Electronics (COMPEL), Santander, 2014
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Palabras clave
Class E
DC-DC converter
E-pHEMT
Frequency modulation
GaN HEMT
Inverter
Outphasing
Synchronous rectifier
UHF
Resumen/Abstract
In this paper, the advantages derived from an appropriate characterization and modeling of active and passive devices, leading to the optimized design of Ultra-High Frequency (UHF) Class-E inverters and synchronous rectifiers, are highlighted. While the combination of a couple of low-frequency and RF measurement techniques is shown to be valid for the extraction of a simplified model as a switch, a more complex approach may be required if also addressing the design of the continuous wave (CW) driving network or if interested in taking fully advantage of other transistor characteristics. Design examples, based on GaN HEMTs and a GaAs E-pHEMT, are presented, in which the parasitics of the employed coils and capacitors are also taken into consideration. Wireless transmitting and powering applications have been addressed.
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