A dual-band outphasing transmitter using broadband class E power amplifiers

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URI: http://hdl.handle.net/10902/10185
ISBN: 978-1-4799-3454-6
ISBN: 978-1-4799-3455-3
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Autoría
Ruiz Lavín, María de las NievesAutoridad Unican; Marante Torres, Reinel; Rizo Salas, Leysi; García García, José ÁngelAutoridad Unican; Gilabert Pinal, Pere Lluís; Montoro López, Gabriel
Fecha
2014
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© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publicado en
International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Leuven, Belgium, 2014.
Editorial
IEEE
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Palabras clave
Chireix
Class E
Efficiency
GaN HEMT
Power amplifier
Outphasing transmitter
Resumen/Abstract
In this paper, a dual-band outphasing transmitter (able of operating either at 770 MHz or 960 MHz frequency bands) is presented. Two broadband RF power amplifiers (PAs) have been designed over packaged GaN HEMT devices, switching close to the nominal zero-voltage and zero-voltage-derivative class E conditions. A reactive combiner, using transmission lines of appropriate electrical lengths at both bands, together with compensating reactances, allows positioning the drain impedance loci to produce high efficiency and good dynamic range profiles. Average drain efficiency figures over 68% and 38% have been measured for WCDMA signals with a peak-to-average power ratio (PAPR) of 5.1 dB and 8.4 dB, respectively.
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