Parametric hysteresis in power amplifiers

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URI: http://hdl.handle.net/10902/10127
ISBN: 978-1-4799-8275-2
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Autoría
Cos Pérez, Jesús deAutoridad Unican; Suárez Rodríguez, AlmudenaAutoridad Unican; García García, José ÁngelAutoridad Unican
Fecha
2015
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© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publicado en
IEEE MTT-S International Microwave Symposium (IMS), Phoenix, Arizona, 2015, 432-435
Editorial
IEEE
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Palabras clave
Bifurcation
Class-E
GaN
Harmonic balance (HB)
Hysteresis
PAE
Power amplifier
Stability
Resumen/Abstract
Parametric hysteresis in power amplifiers is investigated, studying the causes of this phenomenon and providing an efficient methodology for its prediction and elimination. As will be demonstrated, in MESFET and HEMT devices it is caused by a nonlinear resonance of the device input capacitance under near optimum input matching conditions. Bifurcation loci are used to evaluate the impact of the phenomenon under variation of critical design parameters. All the tests have been carried out in a Class -E GaN PA with measured 86.8% PAE and 12.4W output power at 0.9 GHz.
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