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    Stability analysis of power amplifiers under output mismatch effects

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    StabilityAnalysisofP ... (1.152Mb)
    Identificadores
    URI: http://hdl.handle.net/10902/10115
    DOI: 10.1109/TMTT.2014.2344629
    ISSN: 0018-9480
    ISSN: 1557-9670
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    Autoría
    Suárez Rodríguez, AlmudenaAutoridad Unican; Ramírez Terán, Franco ArielAutoridad Unican; Sancho Lucio, Sergio MiguelAutoridad Unican
    Fecha
    2014-10
    Derechos
    © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
    Publicado en
    IEEE Transactions on Microwave Theory and Techniques, 2014, 62(10), 2273-2289
    Editorial
    Institute of Electrical and Electronics Engineers Inc.
    Enlace a la publicación
    https://doi.org/10.1109/TMTT.2014.2344629
    Palabras clave
    Stability analysis
    Bifurcation
    Power amplifier
    Mismatch effects
    Resumen/Abstract
    Novel criteria are presented for small- and large-signal stability analysis of microwave circuits under output mismatch effects. They are based on concepts from bifurcation theory, which enable the derivation of general equations for the stability boundaries that depend on the termination load. The boundary calculation does not require any optimization of the circuit parameters. Instead, it is based on the direct calculation of an admittance function obtained through circuit linearization about either the dc solution, in the small-signal stability analysis, or the periodic solution, in the large-signal one, with low computational cost. As will be demonstrated both with homotopy and bifurcation concepts, the Hopf locus obtained in this way delimits a stable region and a potentially unstable one. In a large-signal stability analysis, the sidebands that influence the stability properties are identified, which depend on the particular amplifier topology and its filtering effects. The stability boundaries are then calculated with the conversion matrix approach for all load impedance values at the relevant harmonic and sideband frequencies. For the derivation of absolute stability conditions, a new scattering type matrix is proposed describing the circuit response from the output reference plane with respect to the two sidebands about the input carrier. The new methodologies and formulations have been validated by independent simulations using pole-zero identification, and by measurements.
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    UNIVERSIDAD DE CANTABRIA

    Repositorio realizado por la Biblioteca Universitaria utilizando DSpace software
    Contacto | Sugerencias
    Metadatos sujetos a:licencia de Creative Commons Reconocimiento 4.0 España