@article{10902/38419,
year = {2012},
month = {12},
url = {https://hdl.handle.net/10902/38419},
abstract = {In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide are reported. A three-stage LNA, operating in 4-12 GHz and cooled to 15 K exhibits an associated gain of 31.5 dB ± 1.8 dB and average noise temperature of 5.3 K (NF=0.079 dB) with a low power dissipation of 8 mW. Additionally another three-stage LNA 25-34 GHz cooled to 15 K has demonstrated a flat gain of 24.2 dB ± 0.4 dB with 15.2 K (NF=0.22 dB), average noise temperature, with a very low power dissipation of 2.8 mW on chip. The mHEMT-based LNA MMICs have demonstrated excellent noise characteristics at cryogenic temperatures for their use in radio-astronomy applications.},
organization = {This work was supported by the Ministerio de Ciencia e Innovación under Research Program Grant TRA2009-0304. This work was supported in part by the Instituto Geográfico Nacional and the IAF-Fraunhofer funds.},
publisher = {Institute of Electrical and Electronics Engineers Inc.},
publisher = {IEEE Transactions on Microwave Theory and Techniques, 2012, 60(12), 4080-4088},
title = {4-12-and 25-34-GHz cryogenic mHEMT MMIC low-noise amplifiers},
author = {Aja Abelán, Beatriz and Seelmann-Eggebert, Matthias and Bruch, Daniel and Leuther, Arnulf and Massler, Hermann and Baldischweiler, Boris and Schlechtweg, Michael and Gallego Puyol, Juan Daniel and López Fernández, Isaac and Diez González, María del Carmen and Malo Gómez, Inmaculada and Villa Benito, Enrique and Artal Latorre, Eduardo},
}