@conference{10902/38314,
year = {2025},
url = {https://hdl.handle.net/10902/38314},
abstract = {This paper presents a Ku-band low-noise amplifier (LNA) based on 150-nm GaN-on-SiC technology. The 4 -stage monolithic microwave 2integrated circuit (MMIC) LNA is 3×1.5mm2 in area and it is waveguide packaged. On-wafer measurements show a small-signal gain of 35 dB and noise figure of 1.42 dB over the 13.25 to 13.75 GHz, with an average value below 1.57 dB within the whole Ku-band. Packaged characterization yields a minimum of 1.47 dB with 32.3 dB associated gain at 13.5 GHz for a 720 mW power consumption. Performed large-signal measurements demonstrate an output 1dB compression point of 12.9 dBm. The LNA is stressed with a RF CW stepped input power up to 31 dBm, for 5 min, with no significant S-parameters and noise figure degradation. The robustness and noise performance of this amplifier make it a very competitive solution for its feasible integration in the next generation satellite communication systems.},
organization = {This work is supported by European Space Agency under contract 4000138120/22/NL/SD. Universidad de Cantabria also acknowledges Consejería de Industria, Empleo, Innovación y Comercio, Gobierno de Cantabria, Spain, under grant 2023/TCN/005.},
publisher = {Institute of Electrical and Electronics Engineers, Inc.},
publisher = {55th European Microwave Conference (EuMC), Utrecth, Netherlands, 2025, 346-349},
title = {Robust ku-band low-noise amplifier in GaN HEMT technology},
author = {Fuente Rodríguez, Luisa María de la and Aja Abelán, Beatriz and Villa Benito, Enrique and Artal Latorre, Eduardo and Neininger, Philipp and Friesicke, Christian and Thome, Fabian and Brückner, Peter and Lujambio, Aintzane and Lobato, David and Rueda, Mario and Cuadrado-Calle, David and Dutto, Valerie},
}