@article{10902/36193,
year = {2008},
month = {7},
url = {https://hdl.handle.net/10902/36193},
abstract = {In this paper, an experimental procedure is proposed for accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a class E power amplifier (PA). Based on GaN HEMT technology, this transmission line switching PA is aimed to be used as modulating stage of a 900 MHz polar transmitter. Measured results under a two-tone excitation support the need for predistorting functions.},
organization = {This work was supported by the European Commission and the Spanish Ministry of Science and Education through TARGET NoE and project TEC2005-07985-C03-01. The authors want to thank Ryan Baker, Cree, Inc., by his kind support with the GaN HEMT nonlinear model.},
publisher = {Electrical Engineering Department, University of Nevada},
publisher = {International Journal of Microwave and Optical Technology, 2008, 3(3), 202-207},
title = {Accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a GaN HEMT class E power amplifier},
author = {Touhami, Naima Amar and García García, José Ángel and Bedia Expósito, Beatriz and Cabral, Pedro Miguel and Pedro, José Carlos and Boussouis, Mohamed},
}