@conference{10902/3553,
year = {2001},
month = {9},
url = {http://hdl.handle.net/10902/3553},
abstract = {A new set of pseudo-empirical equations are presented in order to simulate the optical and bias dependencies of GaAs MESFET junction capacitances, which is valid for the whole I-V plane. The variations induced in the small signal equivalent circuit by the optical illumination are extracted from on-wafer scattering parameter measurements. New linear and quasi-logarithmic variations versus the incident optical power are shown for gate-to-drain and gate-to-source (Cgd and Cgs) capacitances. Furthermore, experimental results are in very good agreement with the simulated values for a wide range of optical power and bias conditions.},
publisher = {URSI 2001, XVI Simposium Nacional de la Unión Científica Internacional de Radio, Villaviciosa de Odón, Madrid},
title = {Nuevo modelo de capacidad de puerta para transistores MESFET de microondas incluyendo efectos ópticos},
author = {Zamanillo Sainz de la Maza, José María and Navarro Meana, César and Pérez Vega, Constantino and Saiz Ipiña, Juan Antonio and Mediavilla Sánchez, Ángel},
}