@conference{10902/3551,
year = {2001},
month = {9},
url = {http://hdl.handle.net/10902/3551},
abstract = {This paper is the result of our research on large signal dynamic behavior (Pulsed I/V curves) of GaAs device, in the overall I/V plane, when the incident optical input power is changed. Acomplete bias and optical power dependent large signal model for a MESFET is determined from experimental S-parameters, DC and pulsed measurements. All derivatives of the model shown here are continuous for a realistic description of circuit distortion and intermodulation. The dependencies of circuit elements with optical illumination and the quiescent operating point are evaluated, and a comparison between theoretical and measured results over optical power and bias ranges is shown. Experimental results show a very good agreement with the theoretical analysis.},
publisher = {URSI 2001, XVI Simposium Nacional de la Unión Científica Internacional de Radio, Villaviciosa de Odón, Madrid},
title = {Nuevo modelo de gran-señal para transistores MESFET de microondas incluyendo efectos ópticos},
author = {Zamanillo Sainz de la Maza, José María and Navarro Meana, César and Pérez Vega, Constantino and Saiz Ipiña, Juan Antonio and Mediavilla Sánchez, Ángel},
}