@conference{10902/3503,
year = {2002},
month = {9},
url = {http://hdl.handle.net/10902/3503},
abstract = {An approach to heterojunction bipolar transistors (HBT’s)
characterization and modeling is presented whit a compact HBT
nonlinear circuit model which accounts for the temperature
dependence effects. The parameters are extracted from DC and
S-parameters measurements. The power characteristics of the
device are then predicted using the extracted model without any
further optimizations. The model has been implemented in MDS
–HP nonlinear simulator. Good fitting is obtained in DC and
scattering curves up to 40 GHz. An amplifier designed with the
HBT67 transistors is presented. Simulations show good
agreement with measurements.},
publisher = {URSI 2002, XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares},
title = {Modelización de dispositivos de SiGe (HBTs) para un amplificador monoetapa},
author = {Lafuente Palacín, María Teresa and Pascual Gutiérrez, Juan Pablo and Fuente Rodríguez, Luisa María de la and Artal Latorre, Eduardo},
}