@conference{10902/3501,
year = {2002},
month = {9},
url = {http://hdl.handle.net/10902/3501},
abstract = {Important efforts are currently being made on linear
amplification, and novel techniques are being developed,
based on the transistor characteristics. This paper proposes
the use of the large-signal behavior of the in-band
intermodulation distortion (IMD) components in FET devices
for linearization of class B amplifiers.},
publisher = {URSI 2002, XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares},
title = {Linealización a nivel de dispositivo mediante la utilización del comportamiento gran señal de los FET´s},
author = {García García, José Ángel and Malaver, Emigdio and Cabria de Juan, Lorena},
}