@article{10902/35001,
year = {2010},
url = {https://hdl.handle.net/10902/35001},
abstract = {On the basis of a scanning probe microscopy strategy, we propose a combined methodology capable to program nonvolatile multilevel data and read them out in a noninvasive manner. In the absence of the common two-electrode cell geometry, this nanoscale approach permits, in addition, investigating the relevance of inherent film properties. We demonstrate the feasibility of modifying the local electronic response of La₀.₇Sr₀.₃MnO₃ to obtain nanostructures with switchable resistance embedded in low cost oxide thin films, which constitutes a promising approach for fabricating high density nonvolatile memories.},
organization = {This work has been supported by the Spanish Ministerio de Ciencia e Innovación (Grants.MAT2007-62732, MAT2007-29325-E, MAT2008.01022, and CONSOLIDER CSD2007-00041 NANOSELECT), the EC under Contract No. NMP4-CT-2006-032109 (STREP “SURMOF”) and (HIPERCHEM, NESPA), and the Generalitat de Catalunya (Pla de Recerca SGR-0029 and XaRMAE).},
publisher = {American Chemical Society},
publisher = {Nano Letters, 2010, 10(10), 3828-3835},
title = {Reversible resistive switching and multilevel recording in La₀.₇Sr₀.₃MnO₃ thin films for low cost nonvolatile memories},
author = {Moreno Sierra, César and Munuera, Carmen and Valencia, Sergio and Kronast, Florian and Obradors, Xavier},
}