@conference{10902/3497,
year = {2002},
month = {9},
url = {http://hdl.handle.net/10902/3497},
abstract = {As an extension of our previous works in the opticalmicrowave
interaction field, this paper shows the result of the
research on large signal dynamic behavior (pulsed I/V curves)
of AlGaAs P-HEMT (pseudomorphic high electron mobility
transistor) devices, in the overall I/V plane, when the incident
optical input power is changed. A complete bias and optical
power dependent of the large signal model for a P-HEMT is
determined from experimental scattering parameters, DC and
pulsed measurements. All derivatives of the model shown here
are continuous for a realistic description of circuit distortion
and intermodulation. Experimental results show very good
agreement with the theoretical analysis.},
publisher = {URSI 2002, XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares},
title = {Modelo de gran-señal para transistores P-HEMT y MESFET de microondas incluyendo efectos ópticos},
author = {Zamanillo Sainz de la Maza, José María and Navarro Meana, César and Pérez Vega, Constantino and Mediavilla Sánchez, Ángel and Tazón Puente, Antonio},
}