@conference{10902/3495,
year = {2002},
month = {9},
url = {http://hdl.handle.net/10902/3495},
abstract = {A new measurement procedure for observing the
dependence of the frequency dispersion effect on electric field
for GaAs MESFET/HEMT devices is presented. The new
procedure employs a statistically based pulse I/V measurement
system for observing the memory effect in these devices. The
results indicate, possibly for the first time, the true extent of the
effects of the traps in these devices.},
publisher = {URSI 2002, XVII Simposium Nacional de la Unión Científica Internacional de Radio, Alcalá de Henares},
title = {Dependencia de los estados trampa respecto al campo eléctrico en dispositivos MESFET y HEMT},
author = {Rodríguez Téllez, José and Ali, N. T. and Rafael Valdivia, Guillermo and Fernández Ibáñez, Tomás and Mediavilla Sánchez, Ángel and Tazón Puente, Antonio},
}