@article{10902/34775,
year = {2012},
url = {https://hdl.handle.net/10902/34775},
abstract = {We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La₀.₇Sr₀.₃MnO₃  (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.},
organization = {This work has been supported by the Spanish Government through grants MAT2010-20020 and NANOSELECT CSD2007-00041. C. Moreno is presently supported by the Japanese Ministry for Education, Culture, Sports, Science and Technology (MEXT) through the ICYS program. C. Munuera thanks financial support from the Spanish “Juan de la Cierva” postdoctoral program JCI-2011-08815.},
publisher = {Beilstein-Institut Zur Forderung der Chemischen Wissenschaften},
publisher = {Beilstein Journal of Nanotechnology, 2012, 3(1), 722-730},
title = {The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods},
author = {Moreno Sierra, César and Munuera, Carmen and Obradors, Xavier and Ocal, Carmen},
}