@conference{10902/3477,
year = {2003},
month = {9},
url = {http://hdl.handle.net/10902/3477},
abstract = {In this paper, a complete characterization of the linearity sweet-spot evolution in MESFET/HEMT devices is presented. A global experimental extraction of the Ids(Vgs, Vds) Taylor series coefficients is used to introduce the small-signal behavior in the linear and saturated regions. The possibilities of taking advantage of these points in highly linear applications is also discussed. A description of the influence of both bias voltages on the device transition from small- towards large- signal regime is presented. Finally, a technique for improving the linearity-efficiency tradeoff in a class B/C power amplifier (PA) is introduced.},
publisher = {URSI 2003, XVIII Simposium Nacional de la Unión Científica Internacional de Radio, La Coruña},
title = {Regiones de baja distorsión de intermodulación en dispositivos FET: descripción y aplicaciones},
author = {Malaver, Emigdio and García García, José Ángel and Tazón Puente, Antonio and Mediavilla Sánchez, Ángel},
}