@conference{10902/3452,
year = {2003},
month = {9},
url = {http://hdl.handle.net/10902/3452},
abstract = {In a previous work the observed differences
 between the static and dynamic V-I characteristics of
 MESFETs and HEMTs were attributed to electric field
 and frequency effects that could be accounted for via the
 mobility figure for the device. In this paper we continue
 with this work by exploring in more detail the
 relationship between the electric field and frequency
 conditions on the mobility value using a HEMT device.
 We believe that the original multi-bias mobility
 measurements described in this paper can be applied
 equally successfully to the MESFET device.},
publisher = {URSI 2003, XVIII Simposium Nacional de la Unión Científica Internacional de Radio, La Coruña},
title = {Movilidad respecto al campo eléctrico y la frecuencia en dispositivos MESFET/HEMT},
author = {Rafael Valdivia, Guillermo and Rodríguez Téllez, José and Tazón Puente, Antonio and Fernández Ibáñez, Tomás and Mediavilla Sánchez, Ángel},
}