@conference{10902/3412,
year = {2004},
month = {9},
url = {http://hdl.handle.net/10902/3412},
abstract = {As an extension of our previous works in the
electrical modelling of microwave, this paper shows the
result of the research on large signal behaviour (DC I/V
curves) of AlGaAs P-HEMT (pseudomorphic high
electron mobility transistor) devices, in the overall I/V
plane, and how is possible to include the model into the
PSPICE simulator. Experimental results show very good
agreement with the theoretical analysis.},
publisher = {URSI 2004, XIX Simposium Nacional de la Unión Científica Internacional de Radio, Barcelona},
title = {Modelado de transistores PHEMT de microondas en SPICE},
author = {Zamanillo Sainz de la Maza, José María and Ingelmo Gallego, Hilda and Toyos Lanza, Raúl and Pérez Vega, Constantino and Mediavilla Sánchez, Ángel},
}