@conference{10902/3373,
year = {2005},
month = {9},
url = {http://hdl.handle.net/10902/3373},
abstract = {In this paper we present a new method to
evaluate mobility in GaAs devices as well as its
dependence on frequency and bias point. Starting from
the relationship between the high order derivative of the
device drain current source, gmd, and the mobility two
alternative measurement methods to obtain this
parameter versus both bias conditions and frequency
will be presented. At last, the experimental obtained
results will show the validity of the presented approach.},
publisher = {URSI 2005, XX Simposium Nacional de la Unión Científica Internacional de Radio, Gandía},
title = {Medida de la movilidad electrónica en dispositivos GaAs: dependencia con la polarización y la frecuencia},
author = {Chaibi, Mohamed and Rafael Valdivia, Guillermo and Fernández Ibáñez, Tomás and Rodríguez Téllez, José and El Maazouzi, Latifa},
}