@conference{10902/3369,
year = {2005},
month = {9},
url = {http://hdl.handle.net/10902/3369},
abstract = {In this paper, a novel bias control technique is
proposed for obtaining a linear response in class C
amplifiers based on Dual Gate FET technology. An
illustrative DGFET transistor has been characterized in
terms of its intermodulation distortion (IMD) behaviour
versus input power, paying particular attention to the
evolution of the gate-to-source voltage where the sweetspot
appears. Using this technique, an amplifier has been
designed, being the sweet-spot controlled over an 8 dB
input power range, allowing a maximum gain variation
of 1 dB. Finally, experimental results of this sweet-spot
enhancement are shown, either using the classical twotone
excitation or a real QPSK modulated signal.},
publisher = {URSI 2005, XX Simposium Nacional de la Unión Científica Internacional de Radio, Gandía},
title = {Técnica de mejora de la linealidad para amplificadores en tecnología FET de doble puerta},
author = {Pando Junquera, Pelayo and García García, José Ángel},
}