@conference{10902/3368,
year = {2005},
month = {9},
url = {http://hdl.handle.net/10902/3368},
abstract = {As an enhancement of our previous works in the
electrical modelling of microwave and optical-microwave
interaction field, this paper shows the result of the
research on large signal behaviour (DC I/V curves) of
AlGaAs P-HEMT (pseudomorphic high electron mobility
transistor) and MESFET devices, in the overall I/V plane,
when the incident optical input power is changed and how
is possible to include the model into the PSPICE simulator.
Experimental results show very good agreement with the
theoretical analysis.},
publisher = {URSI 2005, XX Simposium Nacional de la Unión Científica Internacional de Radio, Gandía},
title = {Modelado electro-óptico de transistores MESFET y P-HEMT en SPICE},
author = {Zamanillo Sainz de la Maza, José María and Ingelmo Gallego, Hilda and Pérez Vega, Constantino and Mediavilla Sánchez, Ángel},
}