@conference{10902/3334,
year = {2006},
month = {9},
url = {http://hdl.handle.net/10902/3334},
abstract = {This paper shows the transconductance behaviour of
an Enhancement pseudomorphic High Electron Mobility
Transistor (E-pHEMT) when it is cooled to cryogenic
temperatures. DC and RF transconductance values, as well as
I/V curves, are extracted using pulsed measurement techniques
from the device under test which is placed inside a Hellium
closed-cycle cryostat cooled down to 10 K. An increase in
transconductance values, which can help to predict an amplifier
oscillation, and a shift in threshold voltage (VT) are shown. The
obtained results allow a more accurate design of amplifiers, as
well as to serve as a starting point for transistor modelling,
under cryogenic operation.},
publisher = {URSI 2006, XXI Simposium Nacional de la Unión Científica Internacional de Radio, Oviedo, p. 1666-1669},
title = {Medida dinámica de la transconductancia a temperaturas criogénicas en transistores E-pHEMT},
author = {Cano de Diego, Juan Luis and Fernández Ibáñez, Tomás and Artal Latorre, Eduardo},
}