@conference{10902/3328,
year = {2006},
month = {9},
url = {http://hdl.handle.net/10902/3328},
abstract = {In the design of Power amplifiers, the exhibition of very low IMD content is extremely important and the main responsible for IMD is at least the evolution of the third order derivatives concerning the active device (transistor). This document contains information concerning a method of extraction of Static High Order Derivatives of the drain-source current Ids of a MESFET transistor, from first to third order. After a brief description of how to obtain the derivatives analytically, a CAD Implementation has been performed for this purpose. The testbench has been implemented on both Agilent-ADS and MWOffice CAD simulators.},
publisher = {URSI 2006, XXI Simposium Nacional de la Unión Científica Internacional de Radio, Oviedo, p. 1642-1645},
title = {Extracción de derivadas de orden superior en GaAs MESFET’s},
author = {Gutiérrez Ontañón, Andrea and Ibarguren Segovia, Inés and Fernández Ibáñez, Tomás and Mediavilla Sánchez, Ángel and García García, José Ángel and Vanini, Giorgo and Filicori, Fabio},
}