@conference{10902/3217,
year = {2012},
month = {9},
url = {http://hdl.handle.net/10902/3217},
abstract = {This paper describes a broad-band amplifier with
very low noise for the 26-36 GHz frequency range. The
amplifier consists of a previously designed monolithic (MMIC)
amplifier using a 100nm mHEMT process and a high
performance discrete transistor placed in front of it, so that the
overall noise is reduced while the gain is increased if compared
with the MMIC. The transistor was manufactured using a 50
nm mHEMT process. At room temperature the average gain is
35.2 dB and a noise figure of 1.76 dB. When cooled to 16K, the
average noise temperature is 19.1K with an associated gain of
39.4 dB and a DC power consumption of only 15.7 mW.},
publisher = {URSI 2012, XXVII Simposium Nacional de la Unión Científica Internacional de Radio, Elche},
title = {Amplificador de bajo ruido basado en tecnología mHEMT para receptores de radio astronomía},
author = {Cano de Diego, Juan Luis and Fuente Rodríguez, Luisa María de la and Artal Latorre, Eduardo},
}