@conference{10902/3216,
year = {2012},
month = {9},
url = {http://hdl.handle.net/10902/3216},
abstract = {In this paper, a comparison between two different
 techniques: low-frequency (1 MHz) and microwave frequency
 up to 10 GHz measurements, is presented in order to obtain the
 apparent capacitance of Single Anode Schottky Diodes
 fabricated by the University of Virginia. Moreover, W-band S-parameters
 measurements have been performed and presented
 in this work. All measurements are done to obtain a complete
 large signal equivalent circuit model suitable for the device under consideration.},
publisher = {URSI 2012, XXVII Simposium Nacional de la Unión Científica Internacional de Radio, Elche},
title = {Caracterización de diodos Schottky para banda W},
author = {Zeljami, Kaoutar and Gutiérrez Asueta, Jéssica and Pascual Gutiérrez, Juan Pablo and Fernández Ibáñez, Tomás and Tazón Puente, Antonio and Boussouis, Mohamed},
}