@article{10902/31941,
year = {2023},
month = {10},
url = {https://hdl.handle.net/10902/31941},
abstract = {The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the range of 1.5–2.5 × 10¹⁵ neq∕cm² and require a time resolution per detecting layer of 30 ps, for non-irradiated sensors, to 50–70 ps (depending on the exposed fluences) for sensors at the end of their lifetime. To cope with these requirements, the low-gain avalanche diode (LGAD) has been chosen as the baseline detection technology. In this article, an in-depth radiation tolerance study on LGADs manufactured at IMB-CNM using a so-called shallow junction is presented. Proton irradiation at CERN-PS up to fluences of 3 × 10¹⁵ neq∕cm² and neutron irradiation at JSI-Ljubljana up to 2.5 × 10¹⁵ neq∕cm² were performed. Two different active thicknesses were studied: 35 μm and 50 μm. Gain degradation, operation stability, and timing performance were evaluated.},
organization = {This work was developed in the framework of the RD-50 collaboration and has been supported by the Spanish Ministry of Science and Innovation (MCIN/AEI/10.13039/501100011033/), by the European Union's ERDF program "A way of making Europe" (Grant References PID2020-113705RB-C31, PID2020-113705RB-C32, and PID2021-124660OB-C22) and by the European Union's Horizon 2020 Research and Innovation funding program, under Grant Agreement no. 101004761 (AIDAInnova). We thank Dr. Miquel Vellvehi and Dr. Xavier Perpiña (IMB-CNM-CSIC) for their work in performing the thermographic measurements.},
publisher = {North-Holland ; Elsevier Science},
publisher = {Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2023, 1055, 168522},
title = {Timing performance and gain degradation after irradiation with protons and neutrons of Low Gain Avalanche Diodes based on a shallow and broad multiplication layer in a float-zone 35μm and 50μm thick silicon substrate},
author = {Curras Rivera, Esteban and Doblas, Albert and Fernández García, Marcos and Flores, David and González Sánchez, Francisco Javier and Hidalgo Villena, Salvador and Jaramillo Echeverría, Richard William and Moll, Michael and Navarrete Ramos, Efrén and Pellegrini, Giulio and Vila Álvarez, Iván },
}