@conference{10902/3176,
year = {2011},
month = {9},
url = {http://hdl.handle.net/10902/3176},
abstract = {This work is focused on the analysis of cryogenic
performance of diodes, for their use as switching devices in a
wideband 180º phase switch circuit. Two kind of diodes, both
with low equivalent series resistance and low capacitance, are
characterized: a silicon p-i-n diode HPND-4005 and a gallium
arsenide Schottky diode MA4E2037. The 180º phase switch is
designed in hybrid technology working in the Ka-band. Their
behaviour is described at room temperature and at cryogenics
(15 K). Both diodes are assembled in the phase switch and
cryogenic performance is described, showing a broadband
response (more than 40% of relative bandwidth at 30 GHz)
with low insertion loss for an error in phase of less than 2º.},
publisher = {URSI 2011, XXVI Simposium Nacional de la Unión Científica Internacional de Radio, Leganés},
title = {Dispositivos de conmutación en criogenia para conmutadores de fase 180º},
author = {Villa Benito, Enrique and Aja Abelán, Beatriz and Fuente Rodríguez, Luisa María de la and Artal Latorre, Eduardo},
}