@conference{10902/3172,
year = {2011},
month = {9},
url = {http://hdl.handle.net/10902/3172},
abstract = {In this paper, the design of a highly efficient power
amplifier (PA) for UHF applications, based on GaN HEMT
technology, is presented. After reviewing the principles of class J
operation, a lumped element implementation of the multiharmonic
output matching network is proposed, aimed to
synthesize the desired slightly inductive and reactive termination
loads at the fundamental and second harmonic respectively. The
PA provides a peak power added efficiency (PAE) over 80%,
with a gain profile typical of class AB solutions, and amenable
for digital predistortion. The PAE value also keeps over 70%
within a 200 MHz bandwidth, while the power capability may
reach 30 W for high drain biasing values.},
publisher = {URSI 2011, XXVI Simposium Nacional de la Unión Científica Internacional de Radio, Leganés},
title = {Amplificador clase J en UHF a GaN HEMT con PAE superior a 80%},
author = {Rizo Salas, Leysi and Crespo Torre, Santiago and Ruiz Lavín, María de las Nieves and García García, José Ángel},
}