@conference{10902/3117,
year = {2010},
month = {9},
url = {http://hdl.handle.net/10902/3117},
abstract = {Traps (due to the presence of surface-state densities
and deep-levels) and self-heating (due to the power dissipation
in the device) cause important deviation between DC and
dynamic I/V characteristics that limits the output power of the
device at high frequencies, and they must be taken into account
when an accurate nonlinear dynamic model is needed. In this
paper, a new approach to adding traps and self-heating effects
into an existing DC classical nonlinear Ids current source model
for GaN HEMT device is presented. The resulting model is able
to provide accurate simulation of both, static (DC) and dynamic
(Pulsed) current-voltage (I/V) characteristics at any operating
bias point simultaneously. Self-heating is added to the model
without the need of any additional electro-thermal sub-circuit.
Parameters extraction strategy and the model implementation
in a CAD simulator are simple. The very good agreement
between simulation and experimental results demonstrates the
accuracy of the approach.},
publisher = {URSI 2010, XXV Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao},
title = {Modelado no lineal de los efectos dispersivos en los transistores HEMT de GaN},
author = {Chaibi, Mohamed and Fernández Ibáñez, Tomás and Tazón Puente, Antonio and Mediavilla Sánchez, Ángel and Aghoutane, Mohamed and Tribak, Abdelwahed},
}