@conference{10902/3113,
year = {2010},
month = {9},
url = {http://hdl.handle.net/10902/3113},
abstract = {Using as test vehicles virgin and aged GaN HEMT
devices, a study of the kink effect evolution with the applied
electric field and ambient temperature has been performed. The
obtained results lead to a physics explanation of the kink effect
origin as well as its dependence on ambient temperature.
Experimental results, showing the different effects taking place
in the transistor, will be reported for several GaN devices
operating at different electric field and temperature conditions.},
publisher = {URSI 2010, XXV Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao},
title = {Estudio y caracterización del efecto kink en transistores HEMT de GaN},
author = {Mimouni, Asmae and Fernández Ibáñez, Tomás and Tazón Puente, Antonio and Sánchez Sanz, Fernando and Verdú Herce, Marina and Boussouis, Mohamed},
}