@conference{10902/2835,
year = {2010},
month = {9},
url = {http://hdl.handle.net/10902/2835},
abstract = {This document presents the design and measurement results of a monolithic low noise amplifier for the 26–36 GHz band. The 3x1 mm2 chip has been designed using the D01MH process from OMMIC foundry (0.13μm mHEMT, GaInAs-InAlAs with 40% indium content) and a home-made transistor model. On-wafer measurements show a gain of S21 = 30.9 ± 1.9 dB with a mean noise figure of NF = 1.8 dB in the band of interest (minimun NF = 1.4 dB at 31 GHz). Input return loss is generally better than 10 dB while output return loss is better than 15 dB in the same band.},
publisher = {URSI 2010, XXV Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao},
title = {Amplificador monolítico de bajo ruido en banda Ka con tecnología GaAs mHEMT},
author = {Cano de Diego, Juan Luis and Fuente Rodríguez, Luisa María de la},
}