@article{10902/28104,
year = {2022},
month = {7},
url = {https://hdl.handle.net/10902/28104},
abstract = {Interest in layered van der Waals semiconductor gallium monosulfide (GaS) is growing rapidly because of its wide band gap value between those of two-dimensional transition metal dichalcogenides and of insulating layered materials such as hexagonal boron nitride. For the design of envisaged optoelectronic, photocatalytic and photonic applications of GaS, the knowledge of its dielectric function is fundamental. Here we present a combined theoretical and experimental investigation of the dielectric function of crystalline 2H-GaS from monolayer to bulk. Spectroscopic imaging ellipsometry with micron resolution measurements are corroborated by first principle calculations of the electronic structure and dielectric function. We further demonstrate and validate the applicability of the established dielectric function to the analysis of the optical response of c-axis oriented GaS layers grown by chemical vapor deposition (CVD). These optical results can guide the design of novel, to our knowledge, optoelectronic and photonic devices based on low-dimensional GaS.},
organization = {Horizon 2020 Framework Programme (No 899598 – PHEMTRONICS).},
publisher = {The Optical Society (OSA)},
publisher = {Optics Express, 2022, 30(15), 27609-27622},
title = {Layered gallium sulfide optical properties from monolayer to CVD crystalline thin films},
author = {Gutiérrez, Yael and Dilson, Juan and Dicorato, Stefano and Santos Perodia, Gonzalo and Duwe, Matthias and Thiesen, Peter H. and Giangregorio, Maria M. and Palumbo, Fabio and Hingerl, Kurt and Cobet, Christoph and García Fernández, Pablo (físico) and Junquera Quintana, Francisco Javier and Moreno Gracia, Fernando and Losurdo, María},
}