@conference{10902/2794,
year = {2009},
month = {9},
url = {http://hdl.handle.net/10902/2794},
abstract = {In this paper, the possible impact of RF switching device ON resistance variation with drain supply voltage, Ron(VDD) characteristic, on polar transmitter distortion is considered. Using Pulsed I/V measurement results over a 15 W GaN HEMT, the deviation in the Vdd-to-AM modulation profile is estimated. System-level calculations, in the presence of gateto- drain capacitance contribution to carrier feedthrough, allow the evaluation of the secondary role of this dispersion effect.},
publisher = {URSI 2009, XXIV Simposium Nacional de la Unión Científica Internacional de Radio, Santander},
title = {Distorsión no lineal en un transmisor polar debida a la característica Ron(VDD) del dispositivo GaN HEMT},
author = {Marante Torres, Reinel and García García, José Ángel and Cabral, Pedro Miguel da Silva and Pedro, Jose Carlos Esteves Duarte},
}