@conference{10902/2758,
year = {2009},
month = {9},
url = {http://hdl.handle.net/10902/2758},
abstract = {This work presents the description of trapping effects in GaN HEMT’s. Two different effects will be considered: gate-lag and drain-lag, describing their physical origin. Virgin and aged devices will be used as test vehicles to study the dependence on the manufacturing process of the devices electrical behaviour. From a macroscopic point of view, both phenomena are quite different, so whilst gate-lag depends on Vgs voltage, drain-lag depends on the Vds one. Considering differences between virgin and aged devices, a conclusion about the dependence of trap levels on both thermal and electrical stress could be extracted.},
publisher = {URSI 2009, XXIV Simposium Nacional de la Unión Científica Internacional de Radio, Santander},
title = {Caracterización de niveles trampa en transistores HEMT de GaN},
author = {Mimouni, Asmae and Zeljami, Kaoutar and Chaibi, Mohamed and Fernández Ibáñez, Tomás and Tazón Puente, Antonio and Sánchez Sanz, Fernando and Verdú Herce, Marina and Boussouis, Mohamed},
}