@conference{10902/27567,
year = {2011},
url = {https://hdl.handle.net/10902/27567},
abstract = {This paper presents the design, simulation and measurement of two GaAs P-HEMT high linearity amplifiers for S-DMB applications, operating in the S and UHF bands. The amplifiers are part of a high linearity downconverter, so a specific topology and an active matching network have been chosen to achieve a high OIP3 value as well as good input and output return losses without using any external components. The S-band and UHF-band amplifiers exhibit an OIP3 of 23 dBm and 27 dBm respectively. They have also been measured included in a down-converter, achieving a total gain of 19 dB, an ouput P1dB of 10.5 dBm and a OIP3 of 31 dBm.},
organization = {This work has been carried out with the support of the project AMURA, TEC2009-14219-C03-03 of the Ministerio de Ciencia e Innovación of the Spanish Government, and with the project “Acuerdo específico de colaboración para el soporte y consultoría en el area de TTC & RF activa” with Thales Alenia Space, Spain},
publisher = {Institute of Electrical and Electronics Engineers Inc.},
publisher = {Proceedings of the 6th European Microwave Integrated Circuits Conference (EuMIC), Manchester, UK, 2011, 284-287},
title = {High linearity MMIC amplifiers for on-board satellite S-DMB converters},
author = {Jato Llano, Yolanda and Herrera Guardado, Amparo},
}