@conference{10902/2660,
year = {2008},
month = {9},
url = {http://hdl.handle.net/10902/2660},
abstract = {In this paper, reliability prediction models will be proposed, from different measurements obtained in a Life Test using as test vehicle six GaN HEMT’s from wafer AEC1147 provided by III-V Labs. The dependence on stress time of four different magnitudes have been studied (saturated current, gate-source biasing voltage, gate current and transconductance) when monitoring versus time at 175 ºC channel temperature. As a result, mathematical expressions to simulate this dependence have been obtained. The aim of these models is to serve as a tool to circuit designers and manufacturers when studying failure mechanisms.},
publisher = {URSI 2008, XXIII Simposium Nacional de la Unión Científica Internacional de Radio, Madrid},
title = {Estudio y modelado de la fiabilidad en transistores GaN},
author = {Arroyo Díez, Judit and Fernández Ibáñez, Tomás and Sánchez Sanz, Fernando and Verdú Herce, Marina and Tazón Puente, Antonio and Mimouni, Asmae},
}