@conference{10902/2506,
year = {1997},
month = {9},
url = {http://hdl.handle.net/10902/2506},
abstract = {A photovoltaic gate edge effect in planar GaAs MESFET’s has been developmented whereby a sharp increase in optical gain at the transistor edges occurs, is reported in this document. This optical effect is obtained when the transistor edges are illuminated and enchances the fotosensivity of these devices when they are used as photodetectors.},
publisher = {URSI 1997, XII Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao, v. I, p. 37-39},
title = {Efecto de borde en el transistor MESFET GaAs bajo iluminación óptica},
author = {Lomer Barboza, Mauro Matías and Navarro Meana, César and Ruiz García, Francisco Javier and Mediavilla Sánchez, Ángel and López Higuera, José Miguel and García García, José Luis},
}