@conference{10902/20775, year = {2021}, url = {http://hdl.handle.net/10902/20775}, abstract = {In this paper we present the study and obtained results of a MMIC High Power Amplifier operating in X-band. The device is designed using 250nm GaN HEMT on SiC process. The targeted specifications include pulsed operation from 8 to 10.5GHz. In pulsed mode and 28V of drain voltage, an output power more than 40W with (37-40)% PAE has been achieved throughout the bandwidth, while remarkable 52.4W output power with associated 37% PAE has been recorded at 8.75GHz for a 32V of drain voltage. The HPA stability has been studied by considering the influence of external decoupling components and dedicated testing environment.}, publisher = {Institute of Electrical and Electronics Engineers, Inc.}, publisher = {Proceedings of the 15th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, The Netherlands, 2020, 265-268}, title = {Over 40W, X-Band GaN on SiC MMIC amplifier}, author = {Mjema, Charles Alphonce and Haentjens, BenoƮt and Fourn, Erwan and Drissi, M'Hamed and Diego Arroyo, Laura and Herrera Guardado, Amparo}, }