@conference{10902/19292,
year = {2013},
url = {http://hdl.handle.net/10902/19292},
abstract = {A GaN high electron mobility transistor technology with a gate length of 0.25 μm has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5-3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5 dBm was measured at 0.8 GHz, with a linear output power of 24 dBm over the full bandwidth. The MMIC was further assembled and measured in a low-cost plastic QFN package on an evaluation board with optimized thermal design and passive cooling. At a power dissipation of ~3 W the packaged LNA yields an OIP3 of 35-38 dBm over the full bandwidth at a noise figure of <; 1.9 dB.},
publisher = {Institute of Electrical and Electronics Engineers , Inc.},
publisher = {8th European Microwave Integrated Circuit Conference (EuMIC), Nuremberg, Germany, 2013, 428-431},
publisher = {43rd European Microwave Conference (EuMC), Nuremberg, Germany, 2013, 1399-1402},
title = {QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz},
author = {Maroldt, Stephan and Aja Abelán, Beatriz and Raay, Friedbert van and Krause, Sebastian and Brueckner, Peter and Quay, Ruediger},
}