@article{10902/17441,
year = {2019},
month = {10},
url = {http://hdl.handle.net/10902/17441},
abstract = {Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on-insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi-fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 °C.},
organization = {This work was supported by the Spanish MEC under Project GREENSENSE−TEC2015-67883-R and RTI2018-096019-B-C31},
publisher = {Institute of Electrical and Electronics Engineers Inc.},
publisher = {IEEE Transactions on Electron Devices, 2019, 66(10), 4120-4125},
title = {Temperature-dependent thermal capacitance characterization for SOI-MOSFETs},
author = {González Pérez, Benito and Aja Abelán, Beatriz and Artal Latorre, Eduardo and Lázaro Guillén, Antonio and Núnez Ordónez, Antonio},
}